Microstructural impact on electromigration: A TCAD study
نویسندگان
چکیده
منابع مشابه
TCAD Study of Electromigration Failure Modes in Sn-Based Solder Bumps
For the realization of modern integrated circuits new interconnect structures like through-silicon-vias and solder bumps, together with complex multilevel 3D interconnect structures are gaining importance. The application of these new structures unavoidably rises different reliability issues like thermal gradients, electromigration, and stressmigration. In this paper we apply state-of-the art T...
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چکیده ندارد.
15 صفحه اولPhysically based models of electromigration: From Black's equation to modern TCAD models
Electromigration failure is a major reliability concern for integrated circuits. The continuous shrinking of metal line dimensions together with the interconnect structure arranged in many levels of wiring with thousands of interlevel connections, such as vias, make the metallization structure more susceptible to failure. Mathematical modeling of electromigration has become an important tool fo...
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ژورنال
عنوان ژورنال: Facta universitatis - series: Electronics and Energetics
سال: 2014
ISSN: 0353-3670,2217-5997
DOI: 10.2298/fuee1401001c